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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
MPSA94
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown voltage.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -400 -400 -6 -500 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1
(1)
Min -400 -400 -6 40 50 45 40 2%
Typ -
Max -100 -500 -100 -0.35 -0.5 -0.75 -0.75 300 -
Unit V V V nA nA nA V V V V -
Test Conditions IC=-100A IC=-1mA IE=-10A VCB=-400V VCE=-400V VEB=-4V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V
VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 hFE4
DC Current Gain(1)
(1)Pulse Test: Pulse Width
380s, Duty Cycle


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